POWER MOSFET PHOTOVOLTAIC RELAY Microelectronic Power IC Relay Single Pole, Normally Open 0-60V DC, 1.5A

General Description The PVDZ172N Photovoltaic Relay is a single-pole, normally open solid state relay that can replace electromechanical relays used for general purpose switching of DC loads. It utilizes International Rectifier’s HEXFET power MOSFET as the output switch, driven by an integrated c

封装/外壳：8-DIP（0.300"，7.62mm），4 引线 包装：管件 描述：SSR RELAY SPST-NO 1.5A 0-60V 继电器 固态继电器

封装/外壳：8-DIP（0.300"，7.62mm），4 引线 包装：管件 描述：SSR RELAY SPST-NO 1.5A 0-60V 继电器 固态继电器

1 Form A Photovoltaic Relay in a mod. 8-pin DIP Package

Microelectronic Power IC HEXFET Power MOSFET Photovoltaic Relay Single Pole, Normally Open 0-60V DC, 1.5A

文件：105.18 Kbytes Page：5 Pages

Microelectronic Power IC HEXFET Power MOSFET Photovoltaic Relay Single Pole, Normally Open 0-60V DC, 1.5A

文件：105.18 Kbytes Page：5 Pages

Microelectronic Power IC HEXFET Power MOSFET Photovoltaic Relay Single Pole, Normally Open 0-60V DC, 1.5A

文件：105.18 Kbytes Page：5 Pages

Bounce-Free Operation

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Bounce-Free Operation

Bounce-Free Operation

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Microelectronic Power IC HEXFET Power MOSFET Photovoltaic Relay Single Pole, Normally Open 0-60V DC, 1.5A

文件：105.18 Kbytes Page：5 Pages

1 形式 A 光伏继电器。8引脚SMT封装

Microelectronic Power IC HEXFET Power MOSFET Photovoltaic Relay Single Pole, Normally Open 0-60V DC, 1.5A

文件：105.18 Kbytes Page：5 Pages

GaAlAs Infrared Light Emitting Diode

GaAlAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 12 mW (typ.) ● Light emitting spectrum suited for silicon photodetectors : λP = 900 nm (typ.) ● Good optical power output linearity with respect to input current ● Wide d

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60–80 VOLTS 12.5 WATTS . . . designed for low power audio amplifier and low current, high speed switching applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc — MJE171, MJE181 VCEO(sus) = 80 Vdc — MJE172, MJE182

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE