Extremely low capacitance bidirectional ESD protection diode array

1. General description Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode array, part of the TrEOS protection family. This device is housed in a DFN2510A-10 (SOT1176) leadless ultra small Surface-Mounted Device (SMD) plastic package, designed to protect four

Low capacitance ESD protection for high-speed interfaces

Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode array, part of the TrEOS protection family. This device is housed in a DFN2510A-10 (SOT1176) leadless ultra small Surface-Mounted Device (SMD) plastic package, designed to protect four signal lines from the damage • Bidirectional ESD protection for four signal lines\n• VRWM = 3.3 V device\n• Extremely low clamping voltage to protect sensitive I/Os\n• Extremely low clamping voltage: 5.4 V for 6.5 A 8/20 µs surge\n• IEC 61000-4-4 robust up to 40 A into a 50 Ohm termination (2 kV)\n• IEC 61000-4-5 (surge): IPP =;

General Purpose Snap-acting Switches

文件：373.2 Kbytes Page：6 Pages

General Purpose Snap-acting Switches

文件：373.2 Kbytes Page：6 Pages

General Purpose Snap-acting Switches

文件：373.2 Kbytes Page：6 Pages

General Purpose Snap-acting Switches

文件：373.2 Kbytes Page：6 Pages

General Purpose Snap-acting Switches

文件：373.2 Kbytes Page：6 Pages