NPN/NPN resistor-equipped transistors; R1 = 10 k廓, R2 = 47 k廓

NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

NPN resistor-equipped double transistor

DESCRIPTION NPN resistor-equipped double transistor in an SC-88 (SOT363) plastic package. FEATURES • Transistors with built-in bias resistors (R1 typ. 10 kΩ and R2 typ. 47 kΩ) • No mutual interference between the transistors • Simplification of circuit design • Reduces number of componen

Low VCEsat (BISS) transistors

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PNP resistor-equipped double transistor R1 = 4.7 kohm/ R2 = open

NPN/NPN resistor-equipped transistors; R1=10kΩ,R2=47kΩ

50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ

1. General description NPN/NPN Resistor-Equipped double Transistor (RET) in a very small SOT363 (SC-88) Surface- Mounted Device (SMD) plastic package. PNP/PNP complement: PUMB9-Q NPN/PNP complement: PUMD9-Q 2. Features and benefits • 100 mA output current capability • Built-in bias resist

General purpose switching and amplification

50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ