NPN resistor-equipped double transistor

DESCRIPTION NPN resistor-equipped double transistor in an SC-88 (SOT363) plastic package. FEATURES • Transistors with built-in bias resistors R1 and R2 (typ. 47 kΩ each) • No mutual interference between the transistors • Simplification of circuit design • Reduces number of components and boa

丝印代码：2H；NPN/NPN resistor-equipped transistors; R1 = 47 k, R2 = 47 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

NPN/NPN resistor-equipped transistors; R1 = 47 k廓, R2 = 47 k廓

NPN/NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ

NPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. • 100 mA output current capability\n• Built-in bias resistors\n• Simplifies circuit design\n• Reduces component count\n• Reduces pick and place costs\n• AEC-Q101 qualified;

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

NPN/NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 2.2 k-ohm

General description NPN/NPN resistor-equipped transistors. Features ■ Built-in bias resistors ■ Simplifies circuit design ■ Reduces component count ■ Reduces pick and place costs Applications ■ Low current peripheral driver ■ Control of IC inputs ■ Replaces general-purpose transistors in

NPN/NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓

丝印代码：H7；NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

1.1 General description NPN/NPN resistor-equipped transistors. 1.2 Features Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs 1.3 Applications Low current peripheral driver Control of IC inputs Replaces general-purpose transisto

50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 2.2kΩ

NPN/NPN double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.\n NPN/PNP complement: PUMD20-Q\n PNP/PNP complement: PUMB20-Q

NPN/NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm

NPN/NPN Resistor-Equipped Transistors (RET). • Built-in bias resistors\n• Simplifies circuit design\n• Reduces component count\n• Reduces pick and place costs\n• AEC-Q101 qualified;

PNP/PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

Features * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place cost

丝印代码：H8*；NPN/NPN resistor-equipped transistors;

General description NPN/NPN Resistor-Equipped Transistors (RET). Features ■ Built-in bias resistors ■ Simplifies circuit design ■ Reduces component count ■ Reduces pick and place costs Applications ■ Low current peripheral driver ■ Control of IC inputs ■ Replaces general-purpose transist

丝印代码：2H；50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ

1. General description NPN/NPN double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface- Mounted Device (SMD) plastic package. 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduces component coun

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages