NPN/PNP resistor-equipped transistors; R1 = 10 k廓, R2 = open

PNP/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •Low current peripheral drivers •Replacement of general purpose transistors in digital applications •Control of IC inputs. DESCRIPTION PNP/PNP resist

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

NPN/PNP resistor-equipped transistors

DESCRIPTION NPN/PNP resistor-equipped transistors in an SC-88 plastic package. FEATURES • Transistors with different polarity and built-in bias resistors R1 (typ. 47 and 47 kΩ) and R2 (typ. 2.2 and 47 kΩ) • No mutual interference between the transistors • Simplification of circuit design • R

NPN/PNP resistor-equipped transistors; R1 = 47 k廓, R2 = 47 k廓 and R1 = 2.2 k廓, R2 = 47 k廓

NPN/PNP resistor-equipped transistors; R1 = 47 k, R2 = 47 k and R1 = 2.2 k, R2 = 47 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

NPN/PNP resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ and R1 = 2.2 kΩ, R2 = 47 kΩ

1. General description NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface- Mounted Device (SMD) plastic package. 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduces component coun

50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = open

1. General description NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface- Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH4 PNP/PNP complement: PUMB4 2. Features and benefits • Built-in bias resistors • Simplified circuit design • Redu

NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ and R1 = 2.2 kΩ, R2 = 47 kΩ

NPN/PNP resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ and R1 = 2.2 kΩ, R2 = 47 kΩ