PNP resistor-equipped double transistor

Developed especially for the automotive sector, 500 mA RETs combine a transistor with two resistors to provide an optimal integrated solution for digital applications in automotive systems, for example control units. Also an extensive portfolio with single and double 100 mA RETs is available for s

PNP/PNP resistor-equipped transistors; R1 = 47 k廓, R2 = 47 k廓

PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.

丝印代码：B2；PNP/PNP resistor-equipped transistors; R1 = 47 k, R2 = 47 k

1.1 General description PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. 1.2 Features and benefits 1.3 Applications Table 1. Product overview Type number Package NPN/PNP complement NPN/NPN complement Package NXP JEITA configuration PE

PNP/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ

PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. • 100 mA output current capability\n• Built-in bias resistors\n• Simplifies circuit design\n• Reduces component count\n• Reduces pick and place costs\n• AEC-Q101 qualified;

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

PNP/PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW

丝印代码：B9；PNP/PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW

1.1 General description PNP/PNP resistor-equipped transistors 1.2 Features n Built-in bias resistors n Simplifies circuit design n Reduces component count n Reduces pick and place cost 1.3 Applications n Low current peripheral driver n Control of IC inputs n Replacement of general-purpos

PNP/PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm

PNP/PNP resistor-equipped transistors • Built-in bias resistors\n• Simplifies circuit design\n• Reduces component count\n• Reduces pick and place cost\n• AEC-Q101 qualified;

PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.

PNP/PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

丝印代码：T7；PNP/PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

Features * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place cost

丝印代码：B2；50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ

1. General description PNP/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface- Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD12-Q NPN/NPN complement: PUMH2-Q 2. Features and benefits • 100 mA output current capability • Built-in bias resis

50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ

PNP/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.\n NPN/PNP complement: PUMD12-Q\n NPN/NPN complement: PUMH2-Q • 100 mA output current capability\n• Built-in bias resistors\n• Simplifies circuit design\n• Reduces component count\n• Reduces pick and place costs\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

PNP/PNP resistor-equipped transistors R1 = 100 kW, R2 = 100 kW