Wideband RF LDMOS Integrated Power Amplifier 15 W, 700 ??1000 MHz

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Wideband RF LDMOS Integrated Power Amplifier 30 W, 700-1000 MHz

文件：350.96 Kbytes Page：11 Pages

Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 700 ??1000 MHz

文件：814.63 Kbytes Page：11 Pages

Wideband RF LDMOS Integrated Power Amplifier 15 W, 700 – 1000 MHz

RF Power Amplifier ICs

Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 700 – 1000 MHz Broadband on-chip matching, 50-ohm input and ~10-ohm output\n Typical GSM/EDGE performance at 28 V, 920 to 960 MHz - 30 dB gain, 34% efficiency @ 8 W output power,  - 1.5% EVM @ 8W,  - –61 dBc ACPR @ 400 kHz, - –75 dBc ACPR @ 600 kHz\n Typical CW performance, 940 MHz, 28 V: - 20 W P OUT ;

Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 700 – 1000 MHz

The PTMA080152M is a wideband, on chip–matched, 15-watt, 2-stage LDMOS integrated power amplifi er intended for wideband driver applications in the 700 to 1000 MHz frequency range. It is offered in a 20-lead thermally-enhanced overmolded package for cool and reliable operation. • Broadband on-chip matching, 50-ohm input and ~10 -ohm output\n• Typical CW performance, 940 MHz, 28 V\n• Output power at P1dB = 20 W\n• Efficiency = 49%\n• Integrated ESD protection. Meets HBM Class 1B (minimum), per JESD22-A114F\n• Excellent thermal stability, low HCI drift\n• Capable of hand;

Wideband RF LDMOS Integrated Power Amplifier 30 W, 700-1000 MHz

文件：350.96 Kbytes Page：11 Pages

封装/外壳：20-SOIC（0.433"，11.00mm 宽）裸露焊盘 包装：散装 描述：IC AMP GSM 700MHZ-1GHZ DSO20-63 RF/IF，射频/中频和 RFID 射频放大器

封装/外壳：20-SOIC（0.433"，11.00mm 宽）裸露焊盘 包装：托盘 描述：IC AMP GSM 700MHZ-1GHZ DSO20-63 RF/IF，射频/中频和 RFID 射频放大器

Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 700 ??1000 MHz

文件：814.63 Kbytes Page：11 Pages