Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 2620 ??2690 MHz

文件：231.81 Kbytes Page：10 Pages

Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 2620 ??2690 MHz

文件：322 Kbytes Page：10 Pages

Cellular (2300 MHz to 2700 MHz)

High Power RF LDMOS FET, 140 W, 28 V, 2620 – 2690 MHz ·Broadband internal matching\n ·Wide video bandwidth\n ·Typical pulsed CW performance, 2655 MHz, 28 V (combined outputs) - Output power at P1dB = 140 W - Efficiency = 50% - Gain = 16.5 dB\n ·Typical single-carrier WCDMA performance, 2655 MHz, 28 V - Output power = 46 dBm avg - Gain = 17.;

High Power RF LDMOS FET 140 W, 28 V, 2620 – 2690 MHz

Broadband internal matchingWide video bandwidthTypical pulsed CW performance; 2655 MHz; 28 V (combined outputs): Output power at P1dB = 140 W; Effi ciency = 50%; Gain = 16.5 dBCapable of handling 10:1 VSWR @ 28 V; 140 W (CW) output powerIntegrated ESD protectionHuman Body Model Class 1C (per ANS • Broadband internal matching\n• Wide video bandwidth\n• Typical pulsed CW performance; 2655 MHz; 28 V (combined outputs): Output power at P1dB = 140 W; Effi ciency = 50%; Gain = 16.5 dB\n• Capable of handling 10:1 VSWR @ 28 V; 140 W (CW) output power\n• Integrated ESD protection\n• Human Body M;

Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 2620 ??2690 MHz

文件：231.81 Kbytes Page：10 Pages

包装：带 描述：IC AMP RF LDMOS H-37248-4 分立半导体产品 晶体管 - FET，MOSFET - 射频

Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 2620 ??2690 MHz

文件：231.81 Kbytes Page：10 Pages

Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 2620 ??2690 MHz

文件：231.81 Kbytes Page：10 Pages

包装：散装 描述：IC AMP RF LDMOS 分立半导体产品 晶体管 - FET，MOSFET - 射频

Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 2620 ??2690 MHz

文件：231.81 Kbytes Page：10 Pages

CEEtyp

文件：64.36 Kbytes Page：1 Pages