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型号 功能描述 生产厂家 企业 LOGO 操作
PTFB212503FL

Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ??2170 MHz

文件:830.94 Kbytes Page:14 Pages

INFINEON

英飞凌

PTFB212503FL

Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110-2170 MHz

文件:978.81 Kbytes Page:14 Pages

INFINEON

英飞凌

PTFB212503FL

Thermally-Enhanced High Power RF LDMOS FET 240 W, 2110 ??2170 MHz

文件:553.31 Kbytes Page:13 Pages

CREE

科锐

Cellular (2000 MHz to 2200 MHz)

High Power RF LDMOS FET, 240 W, 2110 – 2170 MHz ·Broadband internal input and output matching\n ·Enhanced for use in DPD error correction systems\n ·Wide video bandwidth\n ·Typical single-carrier WCDMA performance at 2170 MHz, 30 V, IDQ = 1.85 A, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 7.5 dB @ 0.01% CCDF - Average output power = ;

INFINEON

英飞凌

High Power RF LDMOS FET240 W, 2110 – 2170 MHz

The PTFB212503FL is a 240-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching, high gain, wide signal bandwidth and reduced memory effects for unparalleled DPD correctability. Manuf • Broadband internal input and output matching\n• Enhanced for use in DPD error correction systems\n• Wide video bandwidth\n• Typical CW performance, 2170 MHz, 30 V\n• Output power at P1dB = 240 W\n• Efficiency = 54%\n• Increased negative gate-source voltage range for improved performance in Doh;

MACOM

Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ??2170 MHz

文件:830.94 Kbytes Page:14 Pages

INFINEON

英飞凌

封装/外壳:2-扁平封装,叶片引线,带法兰 包装:卷带(TR) 描述:IC AMP RF LDMOS H-34288-4 分立半导体产品 晶体管 - FET,MOSFET - 射频

WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ??2170 MHz

文件:830.94 Kbytes Page:14 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ??2170 MHz

文件:830.94 Kbytes Page:14 Pages

INFINEON

英飞凌

封装/外壳:2-扁平封装,叶片引线,带法兰 包装:卷带(TR) 描述:IC AMP RF LDMOS 分立半导体产品 晶体管 - FET,MOSFET - 射频

WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ??2170 MHz

文件:830.94 Kbytes Page:14 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ??2170 MHz

文件:830.94 Kbytes Page:14 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110-2170 MHz

文件:978.81 Kbytes Page:14 Pages

INFINEON

英飞凌

PTFB212503FL产品属性

  • 类型

    描述

  • Matching :

    I/O

  • Frequency Band min max:

    2110.0MHz 2170.0MHz

  • P1dB :

    240.0W 

  • Supply Voltage :

    30.0V 

  • Pout :

    55.0W 

  • Gain :

    18.0dB 

  • Test Signal :

    WCDMA

更新时间:2026-8-3 18:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
2450+
9850
只做原装正品现货或订货假一赔十!
Infineon Technologies
22+
H342884/2
9000
原厂渠道,现货配单
CREE
24+
N/A
577
原装原装原装
INFINEON/英飞凌
25+
H-34288-42
1200
全新原装现货,价格优势
RFPOWER
26+
TO-59
59
价格优势
Wolfspeed Inc.
25+
2-扁平封装 叶片引线 带法兰
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
INFINEO
18+
SMD
85600
保证进口原装可开17%增值税发票
INFINEON
12+
H-34288-42
1427
全新 发货1-2天
INFINEON/英飞凌
23+
TO-59
8510
原装正品代理渠道价格优势
INFINEON/英飞凌
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货

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