Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 ??2170 MHz

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Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz

Cellular (2000 MHz to 2200 MHz)

High Power RF LDMOS FETs, 200 W, 30 V, 2110 – 2170 MHz ·Broadband internal matching\n ·Typical two-carrier WCDMA performance at 2140 MHz, 30 V - Average output power = 50 W - Linear Gain = 15.8 dB - Efficiency = 28% - Intermodulation distortion = –35.5 dBc - Adjacent channel power = –40 dBc\n ·Typical single-carrier WCDMA performance at 2140 MHz, ;

封装/外壳：H-36260-2 包装：卷带（TR） 描述：FET RF 65V 2.14GHZ H-36260-2 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：H-36260-2 包装：卷带（TR） 描述：FET RF 65V 2.14GHZ H-36260-2 分立半导体产品 晶体管 - FET，MOSFET - 射频

Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 ??2170 MHz

文件：402.76 Kbytes Page：11 Pages

SAW Bandpass Filter

文件：191.17 Kbytes Page：5 Pages

ALL DIMENSIONS IN MM [INCH]

文件：115.21 Kbytes Page：1 Pages

ALL DIMENSIONS IN MM [INCH]

文件：177.12 Kbytes Page：1 Pages