125 Watts, 869-894 MHz GOLDMOS Field Effect Transistor

Description The 10195 is an internally matched 125–watt GOLDMOS FET intended for cellular, GSM, D-AMPS, CDMA and EDGE applications. This device operates at 53 efficiency with 13 dB of gain minimum. Full gold metallization ensures excellent device lifetime and reliability. • INTERNALLY MATCHED •

125 Watts, 869?94 MHz GOLDMOS Field Effect Transistor

Hex Inverter/Buffer

The MC10195 is a Hex Buffer Inverter which is built using six EXCLUSIVE NOR gates. There is a common input to these gates which when placed low or left open allows them to act as inverters. With the common input connected to a high logic level the MC10195 is a hex buffer, useful for high fanout cl

Nylon PCB Supports - Imperial Spacing

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CAT.6 SFTP PATCH CABLE

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Hex Inverter/Buffer

文件：87.27 Kbytes Page：4 Pages

Hex Inverter/Buffer

文件：87.27 Kbytes Page：4 Pages