35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor

Description The PTF 10052 is a 35 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55 efficiency and 13.5 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • Performance at 960 MHz, 28 V

35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor

10052 Extreme Compatible Transceiver SFP 1000Base-LX (1310nm, SMF, 10km)

Features ATGBICS 10052 1000Base-LX supports a distance of up to 10km over single mode fibre (SMF) using a wavelength of 1310nm via an LC connector.  Digital optical monitoring (DOM) support is also present enabling real-time monitoring of the parameters of the fibre optic transceiver.  Our produc

High-performance 24-port 10Gb aggregation switch

The X590 Series products are purpose-built 24-port 1Gb/10Gb switches designed for high-performance enterprise and aggregation applications. The X590 can also support a range of uplink interface speeds, including 10Gb, 25Gb, 40Gb, 50Gb, and 100Gb, all in a compact 1RU form factor. This enables the

Scalable advanced 10Gb aggregation switch

The X670-G2 product family provides high density 10 Gigabit Ethernet and 40 Gigabit Ethernet switching in a small 1RU form factor. With its versatile design, the X670-G2 provides high density Layer 2/3 10Gb networking with low latency cut-through switching, and IPv4 and IPv6 unicast and multicast

Scalable advanced 10Gb aggregation switch

The X670-G2 product family provides high density 10 Gigabit Ethernet and 40 Gigabit Ethernet switching in a small 1RU form factor. With its versatile design, the X670-G2 provides high density Layer 2/3 10Gb networking with low latency cut-through switching, and IPv4 and IPv6 unicast and multicast

Nylon PCB Supports - Imperial Spacing

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