NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange. FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides

NPN microwave power transistors

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange. FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides

NPN microwave power transistor

5-7.5 WATTS SINGLE & DUAL OUTPUT DC/DC INDUSTRIAL

Features • 2:1 Input range • Meet EN55022 class B • 1500 VDC isolation • Efficiency to 82

3.3-3.8 GHz WiMAX Power Amplifier (3x3mm)

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3.3-3.8 GHz WiMAX Power Amplifi er (3x3mm)

文件：223.26 Kbytes Page：17 Pages

3.3-3.8 GHz WiMAX Power Amplifi er (3x3mm)

文件：223.26 Kbytes Page：17 Pages

Mounting hardware not included

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