Thermally-Enhanced High Power RF LDMOS FET

文件：316.06 Kbytes Page：8 Pages

Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ??2170 MHz

文件：650.25 Kbytes Page：8 Pages

Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 1805 ??2170 MHz

文件：719.51 Kbytes Page：9 Pages

Thermally-Enhanced High Power RF LDMOS FET

Cellular (2000 MHz to 2200 MHz)

High Power RF LDMOS FET, 80 W, 28 V, 2110 – 2170 MHz ·Asymmetrical design - Main : P1dB = 19 W Typ - Peak : P1dB = 60 W Typ\n ·Broadband internal matching\n ·Wide video bandwidth\n ·Typical CW pulsed performance, 2170 MHz, 28 V (Doherty fixture) - Output power @ P3dB = 75 W - Efficiency = 48% - Gain = 14 dB\n ·Capable of handling 10:1 VSWR @2;

High Power RF LDMOS FET80 W, 28 V, 1805 – 2170 MHz

Input matchedTypical Pulsed CW performance; 2170 MHz; 28 V (Doherty fixture)Output power P3dB 75 WEfficiency 48 %Gain 14 dBCapable of handling 10:1 VSWR @ 28 V; 80 W (CW) output powerPb-free and RoHS compliant • Input matched\n• Output power P3dB 75 W\n• Gain 14 dB\n• Pb-free and RoHS compliant\n;

Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ??2170 MHz

文件：650.25 Kbytes Page：8 Pages

Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ??2170 MHz

文件：650.25 Kbytes Page：8 Pages

Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ??2170 MHz

文件：650.25 Kbytes Page：8 Pages

Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ??2170 MHz

文件：650.25 Kbytes Page：8 Pages

包装：卷带（TR） 描述：IC AMP RF LDMOS 分立半导体产品 晶体管 - FET，MOSFET - 射频

Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ??2170 MHz

文件：650.25 Kbytes Page：8 Pages

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC AMP RF LDMOS 分立半导体产品 晶体管 - FET，MOSFET - 射频

PRECISION N-CHANNEL EPAD MOSFET ARRAY QUAD HIGH DRIVE NANOPOWER MATCHED PAIR

文件：107.53 Kbytes Page：12 Pages

PRECISION N-CHANNEL EPAD MOSFET ARRAY QUAD HIGH DRIVE NANOPOWER MATCHED PAIR

文件：107.53 Kbytes Page：12 Pages

PRECISION N-CHANNEL EPAD MOSFET ARRAY QUAD HIGH DRIVE NANOPOWER MATCHED PAIR

文件：107.53 Kbytes Page：12 Pages