1 AMP LOW VOLTAGE INPUT INTEGRATED SWITCHING REGULATOR

文件：474.78 Kbytes Page：4 Pages

1 AMP LOW VOLTAGE INPUT INTEGRATED SWITCHING REGULATOR

文件：474.78 Kbytes Page：4 Pages

封装/外壳：3-SIP 模块 包装：托盘 描述：DC DC CONVERTER 3.3V 电源 - 板安装 直流转换器

封装/外壳：3-SMD 模块 包装：托盘 描述：DC DC CONVERTER 3.3V 电源 - 板安装 直流转换器

1 AMP LOW VOLTAGE INPUT INTEGRATED SWITCHING REGULATOR

文件：474.78 Kbytes Page：4 Pages

1 AMP LOW VOLTAGE INPUT INTEGRATED SWITCHING REGULATOR

文件：474.78 Kbytes Page：4 Pages

Product Brief 12MHz 4-, 8-, 10- & 12-Channel Rail-to-Rail Input-Output Buffers

General Description The EL5123C, EL5223C, EL5323C, and EL5423C are low power, high voltage rail-to-rail input/output buffers designed primarily for use in reference voltage buffering applications for TFT_LCDs. They are available in quad (EL5123C), octal (EL5223C), 10-channel (EL5323C), and 12-c

Product Brief 12MHz 4-, 8-, 10- & 12-Channel Rail-to-Rail Input-Output Buffers

General Description The EL5123C, EL5223C, EL5323C, and EL5423C are low power, high voltage rail-to-rail input/output buffers designed primarily for use in reference voltage buffering applications for TFT_LCDs. They are available in quad (EL5123C), octal (EL5223C), 10-channel (EL5323C), and 12-c

Low-Voltage, Single Supply, Dual SPST, SPDT Analog Switches

Low-Voltage, Single Supply, Dual SPST, SPDT Analog Switches The Intersil ISL5120, ISL5121, ISL5122, ISL5123 devices are precision, bidirectional, dual analog switches designed to operate from a single +2.7V to +12V supply. Targeted applications include battery powered equipment that benefit from

Low-Voltage, Single Supply, Dual SPST, SPDT Analog Switches

Low-Voltage, Single Supply, Dual SPST, SPDT Analog Switches The Intersil ISL5120, ISL5121, ISL5122, ISL5123 devices are precision, bidirectional, dual analog switches designed to operate from a single +2.7V to +12V supply. Targeted applications include battery powered equipment that benefit from

Transmissive Optical Sensor with Phototransistor Output

Description These devices have a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a phototransistor. Due to the special construction, the depth of the gap is equ