N-channel 30 V 6 mΩ logic level MOSFET in LFPAK

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits  High efficiency due to low sw

N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET

N-channel 30 V 6.5 mΩ logic level MOSFET in LFPAK using NextPower technology

1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High reliability Power SO8 package, qualified to 175°C  L

NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)

NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)

N-channel TrenchMOS logic level FET

NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)

文件：1.8032 Mbytes Page：8 Pages

N-channel 30 V 6.5 m logic level MOSFET in LFPAK using

文件：307.65 Kbytes Page：15 Pages

NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)

文件：1.8032 Mbytes Page：8 Pages

N-channel 30 V, 6.0 m廓 logic level MOSFET in LFPAK56 using NextPowerS3 Technology

文件：753.92 Kbytes Page：13 Pages

N-channel 30 V, 6.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology

N-channel 30 V, 6.0 m廓 logic level MOSFET in LFPAK56 using NextPowerS3 Technology

文件：332.58 Kbytes Page：13 Pages