丝印代码：PSMN5R6-100BS；N-channel 100 V 5.6 mΩ standard level MOSFET in D2PAK

1.1 General description Standard level N-channel MOSFET in a SOT404 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conductio

N-channel 100 V 5.6 mΩ standard level MOSFET in D2PAK

Standard level N-channel MOSFET in a SOT404 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. • High efficiency due to low switching and conduction losses\n• Standard level gate;

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.6mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

N-channel 100 V 5.6 m廓 standard level MOSFET in D2PAK Rev. 1 ??20 March 2012

丝印代码：PSMN5R6-100PS；N-channel 100 V 5.6 mΩ standard level MOSFET in TO220

1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits • High efficiency due to low switching and conduction

N-channel 100 V 5.6 m廓 standard level MOSFET in TO220

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N-channel 100 V 5.6 m廓 standard level MOSFET