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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PSMN008-75P | N-channel TrenchMOS SiliconMAX standard level FET | ETC 知名厂家 | ETC |   |
PSMN008-75P | N-channel TrenchMOS SiliconMAX standard level FET 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | |
PSMN008-75P | N-channel enhancement mode field-effect transistor Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PSMN008-75P in SOT78 PSMN008-75B in SOT404 (D2-PAK). Features ■ Fast switching ■ Low on-state resistance ■ Avalanche ruggedness rated. Applications | Philips 飞利浦 | | |
PSMN008-75P | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.5mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | |
PSMN008-75P | N-channel TrenchMOS SiliconMAX standard level FET | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | |
N-channel enhancement mode field-effect transistor Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PSMN008-75P in SOT78 PSMN008-75B in SOT404 (D2-PAK). Features ■ Fast switching ■ Low on-state resistance ■ Avalanche ruggedness rated. Applications | Philips 飞利浦 | | ||
N-channel TrenchMOS SiliconMAX standard level FET 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.5mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | ||
N-channel TrenchMOS SiliconMAX standard level FET | ETC 知名厂家 | ETC | |
PSMN008-75P产品属性
- 类型
描述
- 型号
PSMN008-75P
- 功能描述
MOSFET RAIL PWR-MOS
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
24+ |
NA/ |
164 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
恩XP |
25+ |
TO220 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
恩XP |
20+ |
TO220 |
32970 |
原装优势主营型号-可开原型号增税票 |
|||
恩XP |
24+ |
TO220 |
990000 |
明嘉莱只做原装正品现货 |
|||
PHI |
23+ |
TO-220 |
1500 |
专做原装正品,假一罚百! |
|||
恩XP |
10+ |
MA |
6000 |
绝对原装自己现货 |
|||
NEXPERIA/安世 |
2022+ |
800 |
6600 |
只做原装,假一罚十,长期供货。 |
|||
恩XP |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
PHI |
25+23+ |
TO263 |
75353 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
PHI |
23+ |
TO-220 |
30000 |
代理全新原装现货,价格优势 |
PSMN008-75P芯片相关品牌
PSMN008-75P规格书下载地址
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瀚佳科技(深圳)有限公司 专业为工厂一站式全套配单服务 0755-23140719/15323480719(微信同号）李s
2019-2-19
DdatasheetPDF页码索引
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