IGBT Module

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NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The HF75-12 is Designed for 12.5 Volt Class AB & C HF Power Amplifier Applications in the 2 to 32 MHz Band. FEATURES INCLUDE: • Replacement for MRF454 & SD1405 • PG = 13 dB Min. @ 30MHz & 75W • Withstands 20:1 Load VSWR

Single output 50W ~ 600W???

Features • marking (Low Voltage Directive) • Wide input voltage range: Universal input 85 ~ 265VAC • PFHC (EN61000-3-2) • EMI (EN55011-B, EN55022-B, VCCI-B, FCC-B) • EMC (EN61000-4-2, -3, -4, -5, -6) • 5 year warranty

Fast Recovery Epitaxial Diode (FRED) Module

Features ● International standard package with DCB ceramic base plate ● Planar passivated chips ● Short recovery time ● Low switching losses ● Soft recovery behaviour ● Isolation voltage 3600 V~ ● UL registered E 72873 Applications ● Antiparallel diode for high frequency switching devices

Fast Recovery Epitaxial Diode (FRED) Module

Features ● International standard package with DCB ceramic base plate ● Planar passivated chips ● Short recovery time ● Low switching losses ● Soft recovery behaviour ● Isolation voltage 3600 V~ ● UL registered E 72873 Applications ● Antiparallel diode for high frequency switching devices

Rectifier Diodes & FRED

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