Schottky barrier diodes

DESCRIPTION The PRLL5817 to PRLL5819 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD87 hermetically sealed glass SMD packages incorporating ImplotecTM(1) technology. FEATURES • Low switching losses • Fast recovery time • Guard ring protected • Herme

Schottky barrier diodes

丝印代码：9；Schottky barrier diodes

FEATURES •Low switching losses •Fast recovery time •Guard ring protected •Hermetically sealed glass SMD package. APPLICATIONS •Low power, switched-mode power supplies •Rectifying •Polarity protection. DESCRIPTION The PRLL5817 to PRLL5819 types are Schottky barrier diodes fabricated in pl

Schottky barrier diodes

The PRLL5817 to PRLL5819 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD87 hermetically sealed glass SMD packages incorporating ImplotecTM 1 technology.\n 1) Implotec is a trademark of Philips.

DIODE SCHOTTKY 30V 1A MELF

封装/外壳：SOD-87 包装：管件 描述：DIODE SCHOTTKY 30V 1A MELF 分立半导体产品 二极管 - 整流器 - 单

Silicon Power Rectifier Stud Mount, Fast Recovery, 12 Amp

Description: The NTE5818 through NTE5825 are silicon fast recovery rectifiers in a DO4 type package having a typical recovery time of 150ns providing high efficiency at frequencies to 250kHz. Typical applications include DC power supplies, inverters, converters, ultrasonic systems, choppers, lo

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * For surface mounted applications * Low profile package * Built-in strain relief * Metal to silicon rectifier , majority carrier conduction * Low power loss , High efficiency * High current capability

TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE - 20 to 40 Volts CURRENT - 1.0 Ampere FEATURES * Ideal for surface mounted applications * Low leakage current for high efficiency * High current capability

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere)

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