200 V, 2 x 5 A dual common cathode hyperfast recovery rectifier

Features and benefits • Reverse voltage: VR ≤ 200 V • Forward current: IF ≤ 5 A (per diode) • Switching time: trr ≤ 30 ns • Pt doped life time control • Low inductance • Power and flat lead SMD plastic package • Package height typical 0.95 mm • High power capability due to clip-bond techno

封装/外壳：TO-277，3-PowerDFN 包装：散装 描述：PNE200100CPE/SOT1289B/CFP15 分立半导体产品 二极管 - 整流器 - 阵列

Schottky PowerMod

Schottky Barrier Rectifier 200 Amperes/ 80 to 100 Volts Guard Ring Protection 175 C Junction Temperature Reverse Energy Tested ROHS Compliant

Silicon NPN epitaxial planar type

Silicon NPN epitaxial planar type For general amplification Complementary to DSA2001 ■ Features ● High forward current transfer ratio hFE with excellent linearity ● Low collector-emitter saturation voltage VCE(sat) ● Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant

All Dimension In MM

文件：97.98 Kbytes Page：1 Pages

Schottky PowerMod

文件：123.26 Kbytes Page：2 Pages

HS Aluminium Housed Resistors

文件：352.91 Kbytes Page：2 Pages