NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics.

PNP SILICON TRANSISTOR

DESCRIPTION PN3565 is PNP silicon planar transistor designed for AF small signal amplifier stages.

Small Signal Transistors

Small Signal Transistors TO-92 Case (Continued)

NPN General Purpose Amplifier

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封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：管件 描述：TRANS NPN 25V 0.5A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN General Purpose Amplifier

NPN General Purpose Amplifier

文件：295.2 Kbytes Page：7 Pages

NPN SILICON TRANSISTOR

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封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：卷带（TR） 描述：TRANS NPN 25V 0.5A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 350V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current :ID= 11A@ TC=25℃ ·Drain Source Voltage : VDSS= 350V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 9A@ TC=25℃ ·Drain Source Voltage : VDSS= 350V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

ATTEN 50W 110V Soldering Station - AT- 937

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Banana Jack To #12, 16, 20 & 22 Pin

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