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型号 功能描述 生产厂家 企业 LOGO 操作
PN3564

Small Signal Transistors

Small Signal Transistors TO-92 Case (Continued)

CENTRAL

PN3564

NPN - RF Transistor Chip

Small Signal Transistor NPN - RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 2.4 x 2.2 MILS Emitter Bondin

CENTRAL

PN3564

Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator

CENTRAL

64K (8192-word 쨈 8-bit) SRAM with OE, CE1, and CE2 Control Pins

Overview The LC3564B, LC3564BS, LC3564BM, and LC3564BT are 8192-word ×8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current. Features

SANYO

三洋

64K (8192 words x 8 bits) SRAM?

64 K (8192 words x 8 bit) SRAM

SANYO

三洋

64K (8192 words x 8 bits) SRAM?

64 K (8192 words x 8 bit) SRAM

SANYO

三洋

NanoPower Voltage Detector

文件:272.1 Kbytes Page:8 Pages

ANALOGICTECH

Advanced Analogic Technologies

PN3564产品属性

  • 类型

    描述

  • 型号

    PN3564

  • 功能描述

    两极晶体管 - BJT NPN Hi-Freq SW

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

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