100 V N-channel Trench MOSFET

丝印代码：T200EN；100 V N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology

100 V N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE • IC Collector current 200A • VCEX Collector-emitter voltage 600V • hFE DC current gain 75 • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION

HIGH POWER SWITCHING USE NON-INSULATED TYPE

HIGH POWER SWITCHING USE NON-INSULATED TYPE • IC Collector current 200A • VCEX Collector-emitter voltage 350V • hFE DC current gain 100 • Non-Insulated Type APPLICATION Robotics, Welders, Forklifts, Golf cart

HIGH POWER GENERAL USE INSULATED TYPE

HIGH POWER GENERAL USE INSULATED TYPE • IT (AV) Average on-state current 200A • IF (AV) Average forward current 200A • VRRM Repetitive peak reverse voltage 400/800/1200/1600V • VDRM Repetitive peak off-state voltage 400/800/1200/1600V • MIX DOUBLE A

HIGH POWER GENERAL USE INSULATED TYPE

HIGH POWER GENERAL USE INSULATED TYPE • IT (AV) Average on-state current 200A • VRRM Repetitive peak reverse voltage 400/800/1200/1600V • VDRM Repetitive peak off-state voltage 400/800/1200/1600V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No.

HIGH POWER GENERAL USE INSULATED TYPE

HIGH POWER GENERAL USE INSULATED TYPE • IT (AV) Average on-state current 200A • IF (AV) Average forward current 200A • VRRM Repetitive peak reverse voltage 400/800/1200/1600V • VDRM Repetitive peak off-state voltage 400/800/1200/1600V • MIX DOUBLE A