Dual N-channel μTrenchMOS standard level FET

1.1 General description Dual N-channel enhancement mode field-effect transistor in a small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology. 1.2 Features and benefits 1.3 Applications Surface-mounted package Footprint 40 smaller than SOT23 Standard

Dual N-channel TrenchMOS standard level FET

Dual N-channel enhancement mode field-effect transistor in a small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.

丝印代码：D7*；Dual N-channel 關TrenchMOS standard level FET

丝印代码：D7*；Dual N-channel mTrenchMOS standard level FET

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2.5 V/3.0 V High Precision Reference

PRODUCT DESCRIPTION The AD780 is an ultrahigh precision band gap reference voltage that provides a 2.5 V or 3.0 V output from inputs between 4.0 V and 36 V. Low initial error and temperature drift combined with low output noise and the ability to drive any value of capacitance make the AD780 the

2.5 V/3.0 V High Precision Reference

PRODUCT DESCRIPTION The AD780 is an ultrahigh precision band gap reference voltage that provides a 2.5 V or 3.0 V output from inputs between 4.0 V and 36 V. Low initial error and temperature drift combined with low output noise and the ability to drive any value of capacitance make the AD780 the

POSITIVE-VOLTAGE REGULATORS

文件：134.53 Kbytes Page：8 Pages

POSITIVE-VOLTAGE REGULATORS

文件：134.53 Kbytes Page：8 Pages

POSITIVE-VOLTAGE REGULATORS

文件：134.53 Kbytes Page：8 Pages