N-channel mTrenchMOS™ standard level FET

1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features 1.3 Applications n Surface mounted package n Footprint 40 smaller than SOT23 n Low on-state resistance n Fast switching. n Driver circuits n Switching in portabl

N-channel TrenchMOS standard level FET

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

N-Channel 60-V (D-S) MOSFET

文件：1.01313 Mbytes Page：8 Pages

N-channel uTrenchMOS standard level FET

文件：90.43 Kbytes Page：12 Pages

2.5 V/3.0 V High Precision Reference

PRODUCT DESCRIPTION The AD780 is an ultrahigh precision band gap reference voltage that provides a 2.5 V or 3.0 V output from inputs between 4.0 V and 36 V. Low initial error and temperature drift combined with low output noise and the ability to drive any value of capacitance make the AD780 the

2.5 V/3.0 V High Precision Reference

PRODUCT DESCRIPTION The AD780 is an ultrahigh precision band gap reference voltage that provides a 2.5 V or 3.0 V output from inputs between 4.0 V and 36 V. Low initial error and temperature drift combined with low output noise and the ability to drive any value of capacitance make the AD780 the

POSITIVE-VOLTAGE REGULATORS

文件：134.53 Kbytes Page：8 Pages

POSITIVE-VOLTAGE REGULATORS

文件：134.53 Kbytes Page：8 Pages

POSITIVE-VOLTAGE REGULATORS

文件：134.53 Kbytes Page：8 Pages