60 V, 2 A Trench Schottky barrier rectifier

1. General description Trench Schottky barrier rectifier encapsulated in a CFP2-HP (SOD323HP) power flat lead Surface- Mounted Device (SMD) plastic package. 2. Features and benefits • Low forward voltage • Low Qrr and low IRM • Low leakage current • High power capability due to clip-bondi

60 V, 2 A Trench Schottky barrier rectifier

1. General description Trench Schottky barrier rectifier encapsulated in a CFP2-HP (SOD323HP) power flat lead Surface- Mounted Device (SMD) plastic package. 2. Features and benefits • Low forward voltage • Low Qrr and low IRM • Low leakage current • High power capability due to clip-bondi

封装/外壳：2-SMD，扁平引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 60V 2A SOD323HP 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：2-SMD，扁平引线 包装：卷带（TR） 描述：DIODE SCHOTTKY 60V 2A SOD323HP 分立半导体产品 二极管 - 整流器 - 单

60 V, 2 A low leakage current Trench MEGA Schottky barrier rectifier

1. General description Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier encapsulated in a CFP5 (SOD128) small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Average forward current: IF(AV) ≤ 2 A • Reverse voltage: VR ≤ 6

60 V, 2 A low leakage current Trench MEGA Schottky barrier rectifier

1. General description Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier encapsulated in a CFP5 (SOD128) small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Average forward current: IF(AV) ≤ 2 A • Reverse voltage: VR ≤ 6

60 V, 2 A low leakage current Trench MEGA Schottky barrier rectifier

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NCE Automotive N-Channel Super Trench Power MOSFET

Description The NCEAP60T20D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

N-Channel Super Trench Power MOSFET

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