丝印代码：B8；30 V, 1 A low VF Schottky barrier rectifier

1. General description Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Average forward current: IF(AV) ≤ 1 A • Reverse voltage: VR ≤

1 A low Vf MEGA Schottky barrier rectifier

1 A low VF MEGA Schottky barrier rectifier

丝印代码：B8；30 V, 1 A low VF Schottky barrier rectifier

1. General description Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Average forward current: IF(AV) ≤ 1 A • Reverse voltage: VR ≤

封装/外壳：SOD-123W 包装：卷带（TR）剪切带（CT） 描述：DIODE SCHOTTKY 30V 1A SOD123W 分立半导体产品 二极管 - 整流器 - 单

1 A low VF MEGA Schottky barrier rectifier

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1 A low Vf MEGA Schottky barrier rectifier

封装/外壳：SOD-123W 包装：卷带（TR） 描述：DIODE SCHOTTKY 30V 1A SOD123W 分立半导体产品 二极管 - 整流器 - 单

SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A, HEAT-SINK MTG 3A(VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes FEATURES • Surge overload rating—50 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O • Reliable low

IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes)

VOLTAGE 50 to 1000 Volts CURRENT 3.0 Amperes FEATURES • Plastic material has Underwriters Laboratory Flammability Classification 94V-O • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Both normal and Pb free product are available : No

6-Pin DIP Random-Phase Optoisolators Triac Driver Output

6-Pin DIP Random-Phase Optoisolators Triac Driver Output (250 Volts Peak) The MOC3010 Series consists of gallium arsenide infrared emitting diodes, optically coupled to silicon bilateral switch and are designed for applications requiring isolated triac triggering, low–current isolated ac switchin

LATERAL N-CHANNEL BROADBAND RF POWER MOSFET

Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB, CW amplifier applications. • Guaranteed Performance @ 1.6 GHz, 28 Volts Output Power = 10 Watts Minimum Gain = 9.5 dB @ 10 Watts Minimum Efficiency = 45 @ 10 Watts • High Gain, Rugged Device • Bottom Side

FAST SWITCHING PLASTIC RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes)

VOLTAGE 50 to 1000 Volts CURRENT 3.0 Amperes FEATURES • High current capability. • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Low leakage. • Exceeds environmental standards of MIL-S-19500/228 • Fas