20 V, 1.5 A low VF MEGA Schottky barrier rectifier

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small SOD1608 (DFN1608D-2) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. • Average forward current: IF(AV) ≤ 1.5 A\n• Reverse voltage: VR ≤ 20 V\n• Low forward voltage VF ≤ 420 mV\n• Low reverse current\n• AEC-Q101 qualified\n• Solderable side pads\n• Package height typ. 0.37 mm\n• Ultra small and leadless SMD plastic package;

丝印代码：11000000；20 V, 1.5 A low VF MEGA Schottky barrier rectifier

文件：1.26039 Mbytes Page：15 Pages

20 V, 1.5 A low VF Schottky barrier rectifier

Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small SOD1608 (DFN1608D-2) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. • Average forward current: IF(AV) ≤ 1.5 A\n• Reverse voltage: VR ≤ 20 V\n• Low forward voltage VF ≤ 420 mV\n• Low reverse current\n• Solderable side pads\n• Package height typ. 0.37 mm\n• Ultra small and leadless SMD plastic package\n• Qualified according to AEC-Q101 and recommended for use in autom;

封装/外壳：2-XDFN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTT 20V 1.5A DFN1608D-2 分立半导体产品 二极管 - 整流器 - 单

20 V, 1.5 A low VF MEGA Schottky barrier rectifier

文件：1.12336 Mbytes Page：14 Pages

NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT446A metal ceramic studless package. FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR • Gold m

Integrated Circuit 7-Channel Darlington Array/Driver

Description: The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic sub strate. All units have open–collector outputs and integral diodes for inductive load transie

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

POWER RECTIFIERS(20A,50-200V)

Switchmode Full Plastic Dual Ultrafast Power Rectifiers Designed for use in switching power supplies, inverters and as free wheeling diodes. These state-of-the-art devices have the following features: ✱ High Surge Capacity ✱ Low Power Loss, High Efficiency ✱ Glass Passivated chip junction