Low VF (MEGA) Schottky barrier diode

FEATURES •Forward current: 1.5 A •Reverse voltage: 20 V •Ultra high-speed switching •Very low forward voltage •Very small plastic SMD package. APPLICATIONS •Ultra high-speed switching •Voltage clamping •Protection circuits. DESCRIPTION Planar Maximum Efficiency General Application (MEGA

Low VF (MEGA) Schottky barrier diode

Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOD323 (SC-76) very small SMD plastic package. • Forward current: 1.5 A\n• Reverse voltage: 20 V\n• Ultra high-speed switching\n• Very low forward voltage\n• Very small plastic SMD package.\n• AEC-Q101 qualified;

Low VF (MEGA) Schottky barrier diode

Low VF (MEGA) Schottky barrier diode

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20 V, 1.5 A low VF Schottky barrier diode

Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOD323 (SC-76) very small SMD plastic package. • Forward current: 1.5 A\n• Reverse voltage: 20 V\n• Ultra high-speed switching\n• Very low forward voltage\n• Very small plastic SMD package\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

封装/外壳：SC-76，SOD-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 20V 1.5A SOD323 分立半导体产品 二极管 - 整流器 - 单

Low VF (MEGA) Schottky barrier diode

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NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT446A metal ceramic studless package. FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR • Gold m

Integrated Circuit 7-Channel Darlington Array/Driver

Description: The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic sub strate. All units have open–collector outputs and integral diodes for inductive load transie

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

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General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

POWER RECTIFIERS(20A,50-200V)

Switchmode Full Plastic Dual Ultrafast Power Rectifiers Designed for use in switching power supplies, inverters and as free wheeling diodes. These state-of-the-art devices have the following features: ✱ High Surge Capacity ✱ Low Power Loss, High Efficiency ✱ Glass Passivated chip junction