200 V, 2 A Silicon Germanium (SiGe) rectifier

Features • Low forward voltage and low Qrr • Extremely low leakage current • Thermal stability up to 175 °C junction temperature • Fast and smooth switching • Low parasitic capacitance • AEC-Q101 qualified Benefits • Excellent efficiency • Extraordinary safe operating area • Minimal im

Discrete and MOSFET components, analog & logic ICs

文件：11.62183 Mbytes Page：234 Pages

200 V, 2 A Silicon Germanium (SiGe) rectifier

200 V, 2 A Silicon Germanium (SiGe) rectifier

1. General description Silicon Germanium (SiGe) rectifier encapsulated in a CFP3 (SOD123W) small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Features Benefits • Low forward voltage and low Qrr • Extremely low leakage current • Thermal stability up to

200 V, 2 A Silicon Germanium (SiGe) rectifier

封装/外壳：SOD-123W 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 200V 2A SOD123W 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：SOD-123W 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：PMEG200G20ELR/SOD123W/SOD2 分立半导体产品 二极管 - 齐纳 - 单

200 V, 2 A Silicon Germanium (SiGe) rectifier

Features • Low forward voltage and low Qrr • Extremely low leakage current • Thermal stability up to 175 °C junction temperature • Fast and smooth switching • Low parasitic capacitance • AEC-Q101 qualified Benefits • Excellent efficiency • Extraordinary safe operating area • Minimal im

200 V, 2 A Silicon Germanium (SiGe) rectifier

1. General description Silicon Germanium (SiGe) rectifier encapsulated in a CFP5 (SOD128) small and flat lead Surface- Mounted Device (SMD) plastic package. 2. Features and benefits Features Benefits • Low forward voltage and low Qrr • Extremely low leakage current • Thermal stability up to

Discrete and MOSFET components, analog & logic ICs

文件：11.62183 Mbytes Page：234 Pages