120 V, 1 A Silicon Germanium (SiGe) rectifier

Features • Low forward voltage and low Qrr • Extremely low leakage current • Thermal stability up to 175 °C junction temperature • Fast and smooth switching • Low parasitic capacitance Benefits • Excellent efficiency • Extraordinary safe operating area • Minimal impact on Electro-Magnet

Discrete and MOSFET components, analog & logic ICs

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120 V, 1 A Silicon Germanium (SiGe) rectifier

1. General description Silicon Germanium (SiGe) rectifier encapsulated in a CFP3 (SOD123W) small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Features Benefits • Low forward voltage and low Qrr • Extremely low leakage current • Thermal stability up

120 V, 1 A Silicon Germanium (SiGe) rectifier

封装/外壳：SOD-123W 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SIGE 120V 1A SOD123W 分立半导体产品 二极管 - 整流器 - 单

包装：卷带（TR） 描述：PMEG120G10ELR/SOD123W/SOD2 分立半导体产品 二极管 - 整流器 - 单

FOR OPTICAL INFORMATION SYSTEM

DESCRIPTION ML1XX10 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 685 nm and standard CW light output of 50mW. ML1XX10 has a window-mirror-facet which improves the maximum output power. That leads to highly rel

Standard Size Toggle Switch

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