PNP high-voltage transistor

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter sustaining Voltage : VCEO= -300V(Min) • Low current • SOT-23 plastic package • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Telephony and professional communication equipment.

丝印代码：2D；PNP high-voltage transistor

1. General description PNP high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PMBTA42 2. Features and benefits • Low current (max. 100 mA) • High voltage (max. 300 V) 3. Applications • Telephony • Professional communication equipment

PNP high-voltage transistor

DESCRIPTION PNP high-voltage transistor in a SOT23 plastic package. NPN complement: PMBTA42. FEATURES • Low current (max. 100 mA) • High voltage (max. 300 V). APPLICATIONS • Telephony • Professional communication equipment.

PNP high-voltage transistor

PNP high-voltage transistor in a SOT23 plastic package.\n NPN complement: PMBTA42. • Low current (max. 100 mA)\n• High voltage (max. 300 V).\n• AEC-Q101 qualified;

PNP high-voltage transistor

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PNP high-voltage transistor

PNP high-voltage transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\n NPN complement: PMBTA42-Q • Low current (max. 100 mA)\n• High voltage (max. 300 V)\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

丝印代码：2D；PNP high-voltage transistor

1. General description PNP high-voltage transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PMBTA42-Q 2. Features and benefits • Low current (max. 100 mA) • High voltage (max. 300 V) • Qualified according to AEC-Q101 and recommended for use

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS PNP 300V 0.1A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 300V 0.1A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个