Low-voltage avalanche regulator double diodes

DESCRIPTION The PLVA2600A series consists of two high performance voltage regulator diodes with common anodes, in small SOT23 plastic SMD packages. The series consists of PLVA2650A to PLVA2668A. FEATURES • Very low dynamic impedance at low currents: approximately 1⁄20 of conventional series •

Low-voltage avalanche regulator double diodes

FEATURES •Very low dynamic impedance at low currents: approximately 1⁄20 of conventional series •Hard breakdown knee •Low noise: approximately 1⁄10 of conventional series •Total power dissipation: max. 250 mW •Small tolerances of VZ •Working voltage range: nom. 5.0 to 6.8 V •Non-repetitive

Low-voltage avalanche regulator double diodes

Low-voltage avalanche regulator double diodes

FEATURES •Very low dynamic impedance at low currents: approximately 1⁄20 of conventional series •Hard breakdown knee •Low noise: approximately 1⁄10 of conventional series •Total power dissipation: max. 250 mW •Small tolerances of VZ •Working voltage range: nom. 5.0 to 6.8 V •Non-repetitive

Low-voltage avalanche regulator double diodes

FEATURES •Very low dynamic impedance at low currents: approximately 1⁄20 of conventional series •Hard breakdown knee •Low noise: approximately 1⁄10 of conventional series •Total power dissipation: max. 250 mW •Small tolerances of VZ •Working voltage range: nom. 5.0 to 6.8 V •Non-repetitive

RF POWER AMPLIFIER

The RF Line Broadband RF Array for TV Transmitter The MRFA2600 is a solid state class A amplifier and is specifically designed for TV transposers and transmitters. This amplifier incorporates microstrip technology and reliable Motorola push–pull transistors. • Specified 26.5 Volts: 470–860 MHz

LIGHT BARS

Optocoupler with Phototransistor Output

Description The TCET1600/ TCET2600/ TCET4600 consists of a phototransistor optically coupled to 2 gallium arsenide infrared-emitting diodes in a 4-lead up to 16-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance betw

Silicon NPN Phototransistor

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