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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,12.8A,RDS(ON)=180mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 |  |   | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,12.8A,RDS(ON)=180mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 |  | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,12.8A,RDS(ON)=175mΩ@VGS=10V. RDS(ON)=185mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-Channel100-V(D-S)MOSFET 文件：773.51 Kbytes Page：6 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
N-ChannelEnhancementModeFieldEffectTransistor 文件：354.05 Kbytes Page：4 Pages | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBSEMI |
19+ |
TO-220 |
29600 |
绝对原装现货,价格优势! |
|||
CET/華瑞 |
2022+ |
TO-263 |
50000 |
原厂代理 终端免费提供样品 |
|||
C |
23+ |
TO-220 |
6000 |
原装正品，支持实单 |
|||
23+ |
N/A |
46280 |
正品授权货源可靠 |
||||
VB |
2019 |
TO-220 |
55000 |
绝对原装正品假一罚十! |
|||
CET |
23+ |
TO-263 |
12300 |
全新原装真实库存含13点增值税票! |
|||
- |
21+ROHS |
NA |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
CET/華瑞 |
TO-263 |
499585 |
16余年资质 绝对原盒原盘 更多数量 |
||||
CET(华瑞) |
2112+ |
TO-263 |
105000 |
10个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
CET/華瑞 |
2022+ |
TO-263 |
79999 |
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PJD13N10ALFEA数据表相关新闻
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PJD45P04，全新原装当天发货或门市自取0755-82732291.
2019-10-7PJ-058AH
深圳科雨电子有限公司，联系人：卢小姐手机：18975515225 原装正品大量现货，有需要的可以联系我QQ:97877805微信：wei555222777
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DdatasheetPDF页码索引
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