40V P-Channel Enhancement Mode Mosfet

Features  RDS(ON), VGS@-10V, ID@-20A

低压MOSFET (20 - 40V , RDS(ON) < 1Ω)

40V P-Channel Enhancement Mode Mosfet

Features  RDS(ON), VGS@-10V, ID@-20A

P-Channel Enhancement Mode Power MOSFET

Description The G100P04KA uses advanced trench technology to provid eexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

P-Channel Enhancement Mode Power MOSFET

Description The G100P04KH uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP100P04PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID

Product Scout Automotive

文件：5.67799 Mbytes Page：6 Pages

Product Scout Automotive

文件：5.67799 Mbytes Page：6 Pages