25V N-Channel Enhancement Mode MOSFET

FEATURES • RDS(ON), VGS@10V, IDS@30A=6mΩ • RDS(ON), VGS@4.5V, IDS@30A=9mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Voltage and Current

25V N-Channel Enhancement Mode MOSFET

丝印代码：06N03LA；OptiMOS 2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated

OptiMOS 2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target application • N-channel, logic level • Excellent gate charge x RDS(on)product (FOM) • Superior thermal resistance • 175 °C operating temperature

丝印代码：06N03LA；OptiMOS 2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated

丝印代码：06N03LA；OptiMOS 2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated

丝印代码：06N03L；OptiMOS Buck converter series

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