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型号 功能描述 生产厂家 企业 LOGO 操作
PIP3115-B

Logic level TOPFET

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PHILIPS

飞利浦

PIP3115-B

Logic level TOPFET

ETC

知名厂家

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:托盘 描述:IC PWR DRIVER N-CHAN 1:1 D2PAK 集成电路(IC) 配电开关,负载驱动器

ETC

知名厂家

NPN Epitaxial Silicon Transistor

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=2.2KΩ, R2=10KΩ)

FAIRCHILD

仙童半导体

Triple Video D/A Converters 3 x 10 bit, 150 Ms/s

Description FMS3110/3115 products are low-cost triple D/A converters. Features • 10-bit resolution • 150 megapixels per second • ± 0.1 linearity error • Sync and blank controls • 1.0V p-p video into 37.5Ω or 75Ω load • Internal bandgap voltage reference • Double-buffered data for low dist

FAIRCHILD

仙童半导体

Hybrid integrated circuits for inductive proximity detectors

DESCRIPTION The OM3105P is a hybrid integrated circuit intended for inductive proximity detectors in a tubular construction, especially the M5 hollow stud. The circuit performs a make function (version 1): when actuated, the current flows through the load, which can be for example a LED or an o

PHILIPS

飞利浦

Hybrid integrated circuits for inductive proximity detectors

DESCRIPTION The OM3105P is a hybrid integrated circuit intended for inductive proximity detectors in a tubular construction, especially the M5 hollow stud. The circuit performs a make function (version 1): when actuated, the current flows through the load, which can be for example a LED or an o

PHILIPS

飞利浦

FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION

DEVICE DESCRIPTION The ZNBG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs, PMR, cellular telephones etc. with a minimum of external components. FEATURES • Provides bias for GaAs and HEMT FETs • Drives up to three FET

ZETEX

PIP3115-B产品属性

  • 类型

    描述

  • 型号

    PIP3115-B

  • 功能描述

    MOSFET TAPE13 TOPFET2

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-8-5 10:11:00
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PHI
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PHI
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