Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 – 2200 MHz

Description The GTVA212701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2110 to 2200 MHz frequecy band. It features input matching, high efficiency, and a thermally-enhanced earless package. Features • GaN on SiC HEMT technology • Input matched • Typic

Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 ??2200 MHz

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