N-channel TrenchMOS standard level FET

Description N-channel enhancement mode field-effect power transistor in a fully isolated plastic package using TrenchMOS™ technology. Features ■ Low on-state resistance ■ Fast switching ■ Isolated mounting base ■ Low thermal resistance Applications ■ DC-to-DC converters ■ Switched-mode

N-channel TrenchMOS standard level FET

Description N-channel enhancement mode field-effect power transistor in a fully isolated plastic package using TrenchMOS™ technology. Features ■ Low on-state resistance ■ Fast switching ■ Isolated mounting base ■ Low thermal resistance Applications ■ DC-to-DC converters ■ Switched-mode

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 110V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 90mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

isc N-Channel MOSFET Transistor

·DESCRIPTION ·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage- : VDSS= 110V(Min) ·Fast Switching Speed ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·General purpose power amplifier

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits H

N-channel TrenchMOS standard level FET

TrenchMOS standard level FET

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