PowerMOS transistor Isolated version of PHP20N06E

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=13A@ TC=25℃ · Drain Source Voltage -VDSS=60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.08Ω(Max)@VGS= 10V DESCRIPTION · Switch Mode Power supplies · Motor control, welding, DC/DC and AC/DC converters · Automotive and general purpose switching applica

PowerMOS transistor Isolated version of PHP20N06E

N -CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

DESCRIPTION The UTC 15N06 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

15A, 60V N-CHANNEL POWER MOSFET

文件：245.73 Kbytes Page：6 Pages

Fast Switching

文件：67.34 Kbytes Page：2 Pages

N-Channel 60 V (D-S) MOSFET

文件：1.00223 Mbytes Page：8 Pages

60V N-Channel Enhancement Mode MOSFET

文件：153.75 Kbytes Page：4 Pages