位置：首页 > IC中文资料第5661页 > PHT8N06TT/R
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technolgy the device features very low on-state resistance and has integral zener diodes giving ESD protection. It is intended for use in DC | Philips 飞利浦 |   | ||
TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery t | Motorola 摩托罗拉 | | ||
N-Channel 60 V(D-S) MOSFET 文件：1.08726 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM 文件：212.82 Kbytes Page：8 Pages | Motorola 摩托罗拉 | | ||
TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM 文件：212.82 Kbytes Page：8 Pages | Motorola 摩托罗拉 | |
PHT8N06TT/R产品属性
- 类型
描述
- 型号
PHT8N06TT/R
- 功能描述
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 3.5A I(D) | SOT-223
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEXPERIA/安世 |
2511 |
SOT-223 |
360000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
NK/南科功率 |
2025+ |
SOT-223 |
5555 |
国产南科平替供应大量 |
|||
NEXPERIA/安世 |
24+ |
NA/ |
1000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NEXPERIA/安世 |
23+ |
SOT143B |
69820 |
终端可以免费供样,支持BOM配单! |
|||
PHI |
25+ |
SOT-223 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
恩XP |
24+ |
SOT-223 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
恩XP |
23+ |
08 |
131550 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
PHI |
2022+ |
TO-223 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
PHI |
24+ |
SOT-223 |
3000 |
只做原厂渠道 可追溯货源 |
|||
恩XP |
1415+ |
SOT-223 |
28500 |
全新原装正品,优势热卖 |
PHT8N06TT/R芯片相关品牌
PHT8N06TT/R规格书下载地址
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DdatasheetPDF页码索引
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