PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The PHP10N60E is supplied

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.75Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-Channel 650V (D-S) Power MOSFET

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PowerMOS transistors Avalanche energy rated

10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching a

10A 600V N-channel Enhancement Mode Power MOSFET

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N-Channel 6 50V (D-S) Power MOSFET

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N-Channel 650V (D-S) Power MOSFET

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10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

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