NPN power transistor with integrated diode

NPN power transistor with integrated diode

General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT78 (TO-220AB) plastic package. Features and benefits • Low thermal resistance • Fast switching • High voltage capability • Integrated anti-parallel E

High voltage bipolar transistors for lighting, SMPS and industrial applications

High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT78 plastic package. • Fast switching\n• High voltage capability\n• Integrated anti-parallel E-C diode\n• Low thermal resistance\n• Very low switching and conduction losses;

封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 400V 4A TO220AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN power transistor with integrated diode

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封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR） 描述：TRANS NPN 700V 4A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

POWER TRANSISTORS(4A,300-400V,75W)

SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS designed for use in high-voltage,high-speed,power switching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters. DC-DC conveter, Motor controls, Solenoiid / Relay dri

4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 75 WATTS

4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 75 WATTS These devices are designedfor high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor

NPN SILICON POWER TRANSISTOR

SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls,

Silicon Diffused Power Transistor

GENERAL DESCRIPTION The PHE13005 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The devices are is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. ■ MEDIUM VOLT