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PHB191NQ06LT价格

参考价格:¥8.5904

型号:PHB191NQ06LT,118 品牌:NXP 备注:这里有PHB191NQ06LT多少钱,2026年最近7天走势,今日出价,今日竞价,PHB191NQ06LT批发/采购报价,PHB191NQ06LT行情走势销售排行榜,PHB191NQ06LT报价。
型号 功能描述 生产厂家 企业 LOGO 操作
PHB191NQ06LT

Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology

Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Features ■ Logic level threshold ■ Very low on-state resistance. Applications ■ Motors, lamps, solenoids ■ Uninterruptible power supplies ■ DC-to-DC converters ■

PHILIPS

飞利浦

PHB191NQ06LT

N-channel TrenchMOS logic level FET

ETC

知名厂家

PHB191NQ06LT

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.7mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

PHB191NQ06LT

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low

NEXPERIA

安世

PHB191NQ06LT

N-channel TrenchMOS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. • Low conduction losses due to low on-state resistance\n• Suitable for logic level gate drive sources;

NEXPERIA

安世

Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology

Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Features ■ Logic level threshold ■ Very low on-state resistance. Applications ■ Motors, lamps, solenoids ■ Uninterruptible power supplies ■ DC-to-DC converters ■

PHILIPS

飞利浦

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low

NEXPERIA

安世

N-channel TrenchMOS logic level FET

ETC

知名厂家

PHB191NQ06LT产品属性

  • 类型

    描述

  • Package name:

    D2PAK

  • Product status:

    Production

  • Channel type:

    N

  • Nr of transistors:

    1

  • VDS [max] (V):

    55

  • RDSon [max] @ VGS = 10 V (mΩ):

    3.7

  • RDSon [max] @ VGS = 5 V (mΩ):

    4.2

  • RDSon [max] @ VGS = 4.5 V (mΩ):

    4.4

  • Tj [max] (°C):

    175

  • ID [max] (A):

    75

  • QGD [typ] (nC):

    37.6

  • Ptot [max] (W):

    300

  • Qr [typ] (nC):

    171

  • VGSth [typ] (V):

    1.5

  • Automotive qualified:

    N

  • Ciss [typ] (pF):

    7665

  • Coss [typ] (pF):

    1045

  • Release date:

    2010-11-13

更新时间:2026-8-1 14:14:00
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NEXPERIA/安世
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只做原装现货

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