型号 功能描述 生产厂家 企业 LOGO 操作
PHB101NQ04T

N-channel TrenchMOS standard level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. Features ■ Standard level threshold ■ Very low on-state resistance. Applications ■ Motors, lamps, solenoids ■ Uninterruptible power supplies ■ DC-to-DC converters ■ Ge

Philips

飞利浦

PHB101NQ04T

N-channel TrenchMOS standard level FET

ETC

知名厂家

PHB101NQ04T

N-channel TrenchMOS standard level FET

ETC

知名厂家

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) =8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) =8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-channel TrenchMOS standard level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. Features ■ Standard level threshold ■ Very low on-state resistance. Applications ■ Motors, lamps, solenoids ■ Uninterruptible power supplies ■ DC-to-DC converters ■ Ge

Philips

飞利浦

PHB101NQ04T产品属性

  • 类型

    描述

  • 型号

    PHB101NQ04T

  • 制造商

    PHILIPS

  • 制造商全称

    NXP Semiconductors

  • 功能描述

    N-channel TrenchMOS standard level FET

更新时间:2025-10-1 11:26:00
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