Radar Pulsed Power Transistor 160W, 2.856 GHz, 12關s Pulse, 10 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

Linear Accelerator Pulsed Power Transistor, 16OW, 12ms Pulse, 10 Duty 2.856 GHz

Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • High Efficiency Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input and Output Impedance Matching • Hermetic-Metal/Ceramic Package

Bipolar

·NPN Silicon Microwave Power Transistors\n·RoHS Compliant\n·Hermetic Metal/Ceramic Package\n·Internal Input and Output Impedance Matching\n·Gold Metallization System\n·High Efficiency Inter-Digitized Geometry\n·Diffused Emitter Ballasting Resistor\n·Broadband Class C Operation\n·Common Base Configur;

Radar Pulsed Power Transistor 160W, 2.856 GHz, 12關s Pulse, 10 Duty

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Radar Pulsed Power Transistor

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