N-channel TrenchMOS logic level FET

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N-channel TrenchMOS logic level FET

MOSFET N-CH 30V 100A LFPAK

Integrated Circuit Dual Preamp

Features: Dual Pre Amplifier for Car or Home Stereo Use. High Voltage Gain: GVO = 100dB (Typ) @ f = 1kHz Excellent Channel Separation and High Ripple Rejection: CH Sep. = 70dB (Typ) R.R = 50dB (Typ) Low Noise: VNI = 1.0µVrms (Typ) at Rg = 2.2kΩ, BW = 15Hz to 30kHz

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1730 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. The devices utlizes emitter ballasting for improved ruggedness and reliability. ■ OPTIMIZED FOR SSB ■ 30 MHz ■ 28 VOLTS ■ IMD −30dB ■ EFFICIENCY 40 ■ COMMON EMITTER ■

Photo Modules for PCM Remote Control Systems

Description The TSOP17.. – series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter. The demodulated output signal can directly be decoded by a microprocessor. TSOP17.. is the sta

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µ PA1730 is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-resistance RDS(on)1 = 9.5 mΩ MAX. (VGS = –10 V, ID = –6.5 A) RDS(on)2 = 13.5 mΩ MAX. (VGS = –4.5

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µ PA1730 is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-resistance RDS(on)1 = 9.5 mΩ MAX. (VGS = –10 V, ID = –6.5 A) RDS(on)2 = 13.5 mΩ MAX. (VGS = –4.5