Radar Pulsed Power Transistor

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

Radar Pulsed Power Transistor 6W, 1.2-1.4 GHz, 100關s Pulse, 10 Duty

Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input Impedance Matching • Hermetic Metal/Ceramic Package

Bipolar

·NPN Silicon Microwave Power Transistors\n·RoHS Compliant\n·Hermetic Metal/Ceramic Package\n·Internal Input and Output Impedance Matching\n·Gold Metallization System\n·Diffused Emitter Ballasting Resistors\n·High Efficiency Inter-Digitized Geometry\n·Broadband Class C Operation\n·Common Base Configu;

RADAR PULSED POWER TRANSISTOR, 6W, 100us PULSE, 10 DUTY

文件：89.47 Kbytes Page：1 Pages

Radar Pulsed Power Transistor

文件：547.6 Kbytes Page：3 Pages

Radar Pulsed Power Transistor 6W, 1.2-1.4 GHz, 6ms Pulse, 25 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami