Radar Pulsed Power Transistor

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

Radar Pulsed Power Transistor, SW, 1 .Oms Pulse, 10 Duty 1.2 - 1.4 GHz

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

Bipolar

·NPN Silicon Microwave Power Transistors\n·RoHS Compliant\n·Hermetic Metal/Ceramic Package\n·Internal Input and Output Impedance Matching\n·Gold Metallization System\n·Diffused Emitter Ballasting Resistors\n·High Efficiency Inter-Digitized Geometry\n·Broadband Class C Operation\n·Common Base Configu;

Radar Pulsed Power Transistor 55W, 1.2-1.4 GHz, 1ms Pulse, 10 Duty

文件：159.29 Kbytes Page：2 Pages

Radar Pulsed Power Transistor 55W, 1.2-1.4 GHz, 1ms Pulse, 10 Duty

文件：168.8 Kbytes Page：2 Pages

Radar Pulsed Power Transistor 55W, 1.2-1.4 GHz, 1ms Pulse, 10 Duty

文件：159.29 Kbytes Page：2 Pages

Radar Pulsed Power Transistor

文件：591.87 Kbytes Page：3 Pages

55 Watts - 28 Volts, Pulsed Radar 1200 - 1400 MHz

文件：330.11 Kbytes Page：3 Pages